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HMA82GS7CJR8N-VK Hynix 32GB (16GBx2) PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm Memory

Regular price
$99.00
Sale price
$99.00
Regular price
HMA82GS7CJR8N-VK Hynix 32GB (16GBx2) PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module   Features   Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to...
Type: Laptop Memory
Availability: In Stock

Shipping & Returns

Free shipping and returns available on all orders!
We ship all US domestic orders within 1-2 business days!

Dimensions

Care Instructions

Use a soft damp cloth and a drop of mild soap to remove any haze. Air dry.

Text block

HMA82GS7CJR8N-VK Hynix 32GB (16GBx2) PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm Memory | import_2022_02_27_182133, Notebooks, PC Accessories and Parts

HMA82GS7CJR8N-VK Hynix 32GB (16GBx2) PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module

 

Features

 

Power Supply: VDD=1.2V (1.14V to 1.26V)

VDDQ = 1.2V (1.14V to 1.26V)

VPP - 2.5V (2.375V to 2.75V)

VDDSPD=2.25V to 3.6V

Functionality and operations comply with the DDR4 SDRAM datasheet

16 internal banks

Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available

Data transfer rates: PC4-3200, PC4-2933, PC4-2400, PC4-2133. PC4-1866, PC4-1600

Bi-Directional Differential Data Strobe

8 bit pre-fetch

Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

Supports ECC error correction and detection

On-Die Termination (ODT)

Temperature sensor with integrated SPD

This product is in compliance with the RoHS directive.

Per DRAM Addressability is supported

Internal Vref DQ level generation is available

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